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Sheng S. Li

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Born

1938

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Intersubband Transitions in Quantum Wells: Physics and Devices

by Sheng S. Li First published in 1998
2 editions

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The dopant density and temperature dependence of electron mobility and resistivity in n-type silicon

by Sheng S. Li First published in 1977
1 edition

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Semiconductor physical electronics

by Sheng S. Li First published in 1993
1 edition, 1 ebook
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The theoretical and experimental study of the temperature and dopant density dependence of hole mobility, effective mass, and resistivity in boron-doped silicon

by Sheng S. Li First published in 1979
1 edition

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Semiconductor physical electronics

by Sheng S. Li First published in 2010
1 edition

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Born

1938

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ID Numbers

OLID: OL835015A

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